noun
molecular beam epitaxy; MBE
Technical term in semiconductor physics and materials science for a thin-film crystal growth technique.
分子線エピタキシーは、高品質な半導体薄膜の作製に用いられる。
Molecular beam epitaxy is used to fabricate high-quality semiconductor thin films.
From English 'molecular beam epitaxy', calqued as 分子線 (molecular beam) + エピタキシー (epitaxy).