vapor phase epitaxy; VPE
Technical term in semiconductor manufacturing; refers to a crystal growth method where a vapor deposits a crystalline layer onto a substrate. Often abbreviated as VPE.
See also: 気相エピタキシャル成長
Vapor phase epitaxy is widely used in the production of compound semiconductors.
This equipment forms thin films by vapor phase epitaxy.
Compound of 気相 (vapor phase) and エピタキシー (epitaxy), a loanword from English.