noun
vapor-phase epitaxial growth; vapor-phase epitaxy; VPE
Technical term used in semiconductor device fabrication; refers to a process where a crystalline layer is grown from a vapor phase onto a substrate.
See also: 気相エピタキシー
気相エピタキシャル成長は、高品質な半導体薄膜の作製に用いられる。
Vapor-phase epitaxial growth is used to produce high-quality semiconductor thin films.
Synonymous; 気相エピタキシー is a shorter form of the same term.
Compound of 気相 (vapor phase), エピタキシャル (epitaxial), and 成長 (growth). The term is a direct translation of the English technical phrase.